发明名称 |
INTERDIGITIZED POLYSYMMETRIC FANOUTS, AND ASSOCIATED SYSTEMS AND METHODS |
摘要 |
Systems and methods for testing semiconductor wafers using a wafer translator are disclosed herein. In one embodiment, an apparatus for testing semiconductor dies includes a wafer translator having a wafer-side facing the dies and an inquiry-side facing away from the wafer-side. The inquiry-side of the wafer translator carries a first and a second plurality of inquiry-side contact structures. The first plurality of the inquiry-side contact structures is interleaved with the second plurality of the inquiry-side contact structures. |
申请公布号 |
US2017023616(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615167004 |
申请日期 |
2016.05.27 |
申请人 |
Translarity, Inc. |
发明人 |
Johnson Morgan T. |
分类号 |
G01R1/073;H01L23/00;G01R31/28;H01L21/683 |
主分类号 |
G01R1/073 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus for testing semiconductor dies, comprising:
a wafer translator having
a wafer-side facing the dies, wherein the wafer-side of the wafer translator carries a first and a second plurality of wafer-side contact structures, wherein the first plurality of the wafer-side contact structures is configured to face die contacts of a first die, and wherein the second plurality of the wafer-side contact structures is configured to face the die contacts of a second die;an inquiry-side facing away from the wafer-side, wherein the inquiry-side of the wafer translator carries a first and a second plurality of inquiry-side contact structures; andconductive traces connecting the first plurality of the wafer-side contact structures with the first plurality of inquiry-side contact structures, and the second plurality of the wafer-side contact structures with the second plurality of inquiry-side contact structures, wherein the first plurality of the inquiry-side contact structures is interleaved with the second plurality of the inquiry-side contact structures. |
地址 |
Fremont CA US |