发明名称 |
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS |
摘要 |
Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects. |
申请公布号 |
US2017022065(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615052794 |
申请日期 |
2016.02.24 |
申请人 |
Sung Chien-Min |
发明人 |
Sung Chien-Min;Hu Shao Chung;Lin I-Chiao;Yu Chien-Pei |
分类号 |
C01B31/04;C23C14/06 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a graphite film on a metal surface, comprising:
heating a solid metal substrate to a carbon atom solubilizing temperature that is less than a melting point of the solid metal substrate; solubilizing carbon atoms from a graphite source into the heated solid metal substrate; and cooling the heated solid metal substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid metal substrate, wherein the graphite film is substantially free of lattice defects. |
地址 |
Tansui TW |