METHOD OF MANUFACTURING A THIN FILM TRANSISTOR AND A PIXEL STRUCTURE

摘要

A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.

主权项

1. A method of manufacturing a thin film transistor comprising:
sequentially forming a gate, an insulation layer, a semiconductor layer, and a first photoresist pattern on a substrate, the insulation layer and the semiconductor layer covering the gate and the first photoresist pattern being disposed on the semiconductor layer and located over the gate; patterning the semiconductor layer into a channel layer by using the first photoresist pattern as a mask and subsequently shrinking the first photoresist pattern to remain a remained portion of the first photoresist pattern on the channel layer; forming a conductive material layer on the substrate to cover the remained portion of the first photoresist pattern, the channel layer and the insulation layer; patterning the conductive material layer by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion of the first photoresist pattern; and removing completely the second photoresist pattern and the remained portion of the first photoresist pattern at a same time by performing a stripping process to simultaneously expose the drain, the source, and the channel layer between the source and the drain after the source and the drain is formed, wherein the first photoresist pattern and the second photoresist pattern are two different films disposed on two different layers.