METHOD FOR GROWING GRAPHENE ON SURFACE OF GATE ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACE OF SOURCE/DRAIN SURFACE

摘要

The present invention provides a method for growing graphene on a surface of a gate electrode and a method for growing graphene on a surface of a source/drain electrode, in which a low-temperature plasma enhanced vapor deposition process is adopted to grow a graphene film, of which a film thickness is controllable, on a gate electrode or a source/drain electrode that contains copper, and completely coincides with a pattern of the gate electrode or the source/drain electrode. The manufacturing temperature of graphene is relatively low so that it is possible not to damage the structure of a thin-film transistor to the greatest extents and the supply of carbon sources that is used wide, having low cost and a simple manufacturing process, where existing PECVD facility of a thin-film transistor manufacturing line can be used without additional expense. The gate electrode or the source/drain electrode is covered with graphene and is prevented from contact with moisture and oxygen thereby overcoming the problem of a conventional TFT manufacturing process that a gate electrode or a source/drain electrode that contains copper is readily susceptible to oxidization. Further, the high electrical conductivity of graphene makes it possible not to affect the electrical performance of the entire device.

主权项

1. A method for growing graphene on a surface of a gate electrode, comprising the following steps:
(1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) positioning the substrate that includes the gate electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 300° C.-700° C., a gas flow rate of H2 gas being 10 SCCM to 200 SCCM, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800 W; and (3) continuously introducing H2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the gate electrode, wherein a ratio of flow rate between the hydrocarbon gas and H2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10 min, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode.