发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer. |
申请公布号 |
US2017024336(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615081484 |
申请日期 |
2016.03.25 |
申请人 |
SK hynix Inc. |
发明人 |
Kim Guk-Cheon;Kim Yang-Kon;Noh Seung Mo;Choi Won-Joon |
分类号 |
G06F13/16;H01L43/08;G06F13/42;H01L43/10;G06F12/08;H01L43/02;G11C11/16 |
主分类号 |
G06F13/16 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer. |
地址 |
Icheon-Si KR |