发明名称 Inspection Apparatus, Inspection Method, Lithographic Apparatus and Manufacturing Method
摘要 Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
申请公布号 US2017023867(A1) 申请公布日期 2017.01.26
申请号 US201615214067 申请日期 2016.07.19
申请人 ASML Netherlands B.V. 发明人 STAALS Frank;LUIJTEN Carlo Cornelis Maria;HINNEN Paul Christiaan;VAN OOSTEN Anton Bernhard
分类号 G03F7/20;G01B11/27;G01B11/02 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method of monitoring a lithographic process parameter of a lithographic process, said method comprising: acquiring a first target measurement, said first target measurement having been obtained from inspection of a target performed with a first measurement configuration; acquiring a second target measurement, said second target measurement having been obtained from inspection of a target performed with a second measurement configuration, wherein at least one measurement parameter is varied between said first measurement configuration and said second measurement configuration; and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement.
地址 Veldhoven NL