发明名称 |
Inspection Apparatus, Inspection Method, Lithographic Apparatus and Manufacturing Method |
摘要 |
Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices. |
申请公布号 |
US2017023867(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615214067 |
申请日期 |
2016.07.19 |
申请人 |
ASML Netherlands B.V. |
发明人 |
STAALS Frank;LUIJTEN Carlo Cornelis Maria;HINNEN Paul Christiaan;VAN OOSTEN Anton Bernhard |
分类号 |
G03F7/20;G01B11/27;G01B11/02 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of monitoring a lithographic process parameter of a lithographic process, said method comprising:
acquiring a first target measurement, said first target measurement having been obtained from inspection of a target performed with a first measurement configuration; acquiring a second target measurement, said second target measurement having been obtained from inspection of a target performed with a second measurement configuration, wherein at least one measurement parameter is varied between said first measurement configuration and said second measurement configuration; and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. |
地址 |
Veldhoven NL |