PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF

摘要

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).

主权项

1. A photosensitive polysiloxane composition comprising:
a polysiloxane (A); an o-naphthoquinone diazide sulfonic acid ester (B); an alkali-soluble resin containing a silyl group (C); and a solvent (D); wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),
Si(Ra)W(ORb)4-W  Formula (4), wherein: Ra represents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when Ra is plural, each Ra is the same or different; at least one of Ra represents the alkyl group containing the acid anhydride group; Rb represents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when Rb is plural, each Rb is the same or different; and w represents an integer from 0 to 3.