| 发明名称 |
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation. |
| 申请公布号 |
US2017025567(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201514808295 |
申请日期 |
2015.07.24 |
| 申请人 |
EPISTAR CORPORATION |
发明人 |
LU Shao-Ping;CHEN Yi-Ming;PENG Yu-Ren;LIN Chun-Yu;TSAI Chun-Fu;HSU Tzu-Chieh |
| 分类号 |
H01L33/06;H01L33/10;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device, comprising:
a carrier; and a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation. |
| 地址 |
Hsinchu TW |
