| 发明名称 |
PHOTOELECTRIC CONVERSION DEVICE |
| 摘要 |
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof. |
| 申请公布号 |
US2017025556(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615289646 |
申请日期 |
2016.10.10 |
| 申请人 |
KYOCERA Corporation |
发明人 |
KUBO Shintaro;KIKUCHI Michimasa;ASAO Hideaki;USHIO Shinnosuke |
| 分类号 |
H01L31/032;H01L31/0352;H01L31/046;H01L31/0368 |
主分类号 |
H01L31/032 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoelectric conversion device wherein a polycrystalline semiconductor layer, including a plurality of semiconductor particles coupled together, is used as a light-absorbing layer, wherein each of the semiconductor particles includes a group I-III-VI compound, and wherein, in each of the plurality of semiconductor particles, a surface portion of the semiconductor particle has a higher composition ratio PVI of a group VI-B element to a group III-B element than a central portion of the semiconductor particle. |
| 地址 |
Kyoto-shi JP |
