SHALLOW TRENCH ISOLATION REGIONS MADE FROM CRYSTALLINE OXIDES

摘要

A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites.

主权项

1. A method of forming a semiconductor structure, the method comprising:
etching a trench into a semiconductor substrate; forming a crystalline oxide layer in the trench, wherein the crystalline oxide fills an entire volume of the trench to form an epitaxial oxide structure, wherein said epitaxial oxide structure does not extend above a topmost planar surface of said semiconductor substrate; and forming a first semiconductor structure and a second semiconductor structure on the semiconductor substrate, wherein the epitaxial oxide structure is located between the first semiconductor structure and the second semiconductor structure, and wherein the epitaxial oxide structure substantially electrically isolates the first and the second semiconductor structure.