PLASMA PROCESSING APPARATUS

摘要

A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and foil ling an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.

主权项

1. A plasma processing apparatus comprising:
a chamber that is air-tightly configured such that a predetermined processing is performed on a substrate to be processed (“substrate”) carried into the chamber by plasma generated within the chamber; a placing table provided within the chamber and configured to place the substrate thereon; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the substrate placed on the placing table; an exhaust device connected to the exhaust path and configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, wherein the rectifying plate forms an opening within the exhaust path around the placing table to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.