发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
摘要 Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.
申请公布号 US2017025172(A1) 申请公布日期 2017.01.26
申请号 US201615284662 申请日期 2016.10.04
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 UOCHI Hideki;KAMATA Koichiro
分类号 G11C13/00;H01L29/16;H01L29/49;H01L27/115 主分类号 G11C13/00
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP