发明名称 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置
摘要 This vacuum processing apparatus has: a vacuum container, which has an air releasing unit connected thereto, and which can be depressurized; a substrate holder that is provided with a substrate placing surface for placing a substrate that is disposed in the vacuum container; and a gas introduction unit that is provided with a gas introduction port for introducing a reactive gas into the vacuum container. The gas introduction port is disposed at a position where molecules of the reactive gas discharged into the vacuum container from the gas introduction port are blocked from linearly reaching the substrate placing surface from the gas introduction port, said position being substantially on the center axis of the substrate placing surface, and the reactive gas reaches the substrate placing surface by means of diffusion of a molecular flow.
申请公布号 JP6068662(B2) 申请公布日期 2017.01.25
申请号 JP20150538839 申请日期 2014.05.26
申请人 キヤノンアネルバ株式会社 发明人 品田 正人;廣見 太一
分类号 H01L21/31;G11B5/39;H01L21/316;H01L43/12 主分类号 H01L21/31
代理机构 代理人
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