| 摘要 |
This sputtering target for copper or copper alloy wire forming is characterized in that 30% or less of the entire target are regions detected as having measurements where the intensity of a reflection echo from the target bottom surface is 65% or less or 135% or more in ultrasonic flaw detection measurements with the sensitivity being adjusted so that one arbitrary location within the target plane is set as a reference point and the intensity of the reflection echo from the bottom surface of the target when an ultrasonic wave strikes that reference point is 100%. The present invention addresses the problem of providing a copper or copper alloy sputtering target that can improve film uniformity by controlling non-uniformity of composition, density, structure, and the like locally present in the target. |
