| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation method which can provide analytic values regarding electrical characteristics of a semiconductor device which are close to electrical characteristics of an actually manufactured semiconductor device.SOLUTION: In the simulation method, a target of analysis is a transistor whose channel formation region contains a semiconductor having a band gap wider than silicon, and a value of a drain current for a gate voltage in said transistor is obtained as a solution in a temporally metastable state by using a difference method to solve a plurality of governing equations including the Poisson equation, the electron current equation of continuity and the hole current equation of continuity. |
