| 摘要 |
PROBLEM TO BE SOLVED: To inhibit breaking of a lower layer structure of an electrode pad and separation of a junction part while ensuring workability and reliability of wiring in a semiconductor device.SOLUTION: In a semiconductor device, a barrier metal layer 2a, a wiring layer 1, an electrode pad layer 4 and a passivation film 3 are formed on a base material 10. The wiring layer 1 is formed on an interlayer insulation film 8. The wiring layer 1 is sandwiched by the barrier metal layer 2a and the passivation film 3. The electrode pad layer 4 is exposed from openings of the passivation film 3 which covers a circumference of the electrode pad layer 4. The electrode pad layer 4 which is higher in Cu than the wiring layer 1. |
