| 摘要 |
An electrostatic chuck device is provided in which it is possible to uniformize an in-plane temperature distribution in a placement surface on which a plate-shaped sample such as a wafer is placed and it is possible to improve in-plane uniformity of plasma etching of the plate-shaped sample by uniformizing plasma density on the plate-shaped sample. The electrostatic chuck device includes an electrostatic chuck section that has an upper surface as a placement surface on which a plate-shaped sample is placed, and is made to have an internal electrode for electrostatic adsorption built-in, and a cooling base section that cools the electrostatic chuck section, wherein a heater element (4) having a heater pattern (21) of a predetermined shape is provided between the electrostatic chuck section and the cooling base section, and an island-shaped portion (24) that is independent from the heater pattern (21) and is made of the same material as the heater pattern (21) is provided in a gap portion (23) of the heater pattern (21). |
