| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which remove a metal impurity and the like of a substrate in an easy method and stabilize electrical characteristics while demonstrating intrinsic performance of the semiconductor device.SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: forming a gettering layer on an undersurface side of a drift layer 20 exposed on an undersurface of a substrate; heating the substrate and capturing a metal impurity, a contaminated atom and damages which are introduced to the drift layer 20 by a gettering layer; removing the gettering layer; and forming on the undersurface side of the drift layer, a second diffusion layer 24 (collector layer) and an electrode 26 which contacts the second diffusion layer 24; forming doped polysilicon doped with an impurity so as to contact the drift layer 20 exposed on the undersurface of the substrate; heating the substrate to cause the impurity to diffuse to the undersurface side of the drift layer to form on the undersurface side of the drift layer, a gettering layer having a crystal defect and an impurity; and removing the doped polysilicon when removing the gettering layer. |
