| 摘要 |
This plasma processing apparatus is provided with: an anode electrode having mounted thereon a substrate to be processed; a cathode electrode having a through hole, which penetrates between two main surfaces that face each other with openings respectively provided therein, and which has tapered opening portions such that the diameter of the openings is larger than the diameter of an intermediate portion, said cathode electrode being disposed such that at least one of the two main surfaces faces the substrate mounted on the anode electrode; a gas supply apparatus that introduces a process gas between the anode electrode and the cathode electrode; and an alternating current power supply, which supplies alternating current power between the anode electrode and the cathode electrode, and which brings the process gas into the alternating current plasma state on the two main surfaces of the cathode electrode. |
