发明名称 |
METHODS FOR DEPOSITING GROUP 13 METAL OR METALLOID NITRIDE FILMS |
摘要 |
Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 ; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained. |
申请公布号 |
EP3121309(A1) |
申请公布日期 |
2017.01.25 |
申请号 |
EP20160181088 |
申请日期 |
2016.07.25 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
LEI, Xinjian;KIM, Moo-Sung;IVANOV, Sergei Vladimirovich |
分类号 |
C23C16/30;C23C16/34;C23C16/455;C23C16/56 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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