| 摘要 |
The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured to excite the gas supplied into the process chamber; an exhaust unit configured to exhaust the inside of the process chamber; and a controller. The controller controls a reducing gas to be supplied into the process chamber in a state in which the wafer is supported by the lifter pins, and controls the gas supply unit to supply an oxidizing gas and a reducing gas into the process chamber in a state in which the wafer is supported by the susceptor. |
