发明名称 ウェーハの加工方法
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method capable of preventing breakage of a thinly ground wafer and appropriately dividing the wafer along a division schedule line.SOLUTION: A wafer processing method comprises the steps of: sticking and fixing a wafer (W) to a support member (S) via a resin (R) (wafer sticking step); thinning the wafer by grinding a rear surface (W2) side of the wafer; forming a division starting point region (W3) by irradiating the wafer with a laser beam (L) (laser beam irradiation step); sticking an expand tape (T); cooling the wafer so as to decrease resin adhesion (first cooling step); peeling the support member with the resin adhesion decreased; dividing the wafer into individual devices; cooling the wafer again so as to decrease the resin adhesion (second cooling step); and peeling the resin with the resin adhesion decreased (resin removal step).
申请公布号 JP6067348(B2) 申请公布日期 2017.01.25
申请号 JP20120257543 申请日期 2012.11.26
申请人 株式会社ディスコ 发明人 下谷 誠
分类号 H01L21/301 主分类号 H01L21/301
代理机构 代理人
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