发明名称 電子部品およびパワー半導体装置
摘要 PROBLEM TO BE SOLVED: To provide polyimide for semiconductor adhesion that has excellent adhesive power to SiC, and that hardly warps due to shrinkage.SOLUTION: The polyimide for a semiconductor adhesion contains 10-40 mole% of a residue of diamine shown by formula (1) in the whole of a diamine residue. In the general formula (1), Rdenotes hydrogen, a 1-4C alkyl group, a 1-4C fluoroalkyl group, a 1-4C alkoxyl group, a phenyl group or an alkylation phenyl group in which at least one of a hydrogen atom of a phenyl group is substituted by a 1-10C alkyl group; Rand Reach independently denote a 1-4C alkyl group, a 1-4C fluoroalkyl group, a 1-4C alkoxyl group, a phenyl group or an alkylation phenyl group in which at least one hydrogen atom of a phenyl group is substituted by a 1-10C alkyl group; x and z each denote an integer of 0-10, and y denotes an integer of 1-50, and 0<x+z&le;20.
申请公布号 JP6065495(B2) 申请公布日期 2017.01.25
申请号 JP20120210688 申请日期 2012.09.25
申请人 東レ株式会社 发明人 奥田 裕美子;増田 有希;富川 真佐夫
分类号 C08G73/10;C09J179/08 主分类号 C08G73/10
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