发明名称 マグネトロンスパッタ成膜装置およびマグネトロンスパッタ成膜方法
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputter film deposition apparatus and a magnetron sputter film deposition method that can form a thin film having superior gas barrier properties and small surface unevenness, and to provide a film member having a gas barrier film which has superior gas barrier properties and small surface unevenness.SOLUTION: A magnetron sputter film deposition apparatus 1 includes a base material 20, a backing plate 31, a target 30, a magnetron sputter cathode 3 having a magnet member 32, and a microwave plasma generation device 4 irradiating the part between the base material 20 and the target 30 with a microwave plasma. The plasma density between the base material 20 and the target 30 is larger nearby the target 30 than nearby the base material 20, and electron cyclotron resonance (ECR) is caused on a surface of the target 30. The target 30 is sputtered with a generated ECR plasma P2 and flying-out sputter particles are stuck on a surface of the base material 20 to form a thin film.
申请公布号 JP6067300(B2) 申请公布日期 2017.01.25
申请号 JP20120215755 申请日期 2012.09.28
申请人 住友理工株式会社 发明人 笹井 建典
分类号 C23C14/35;H05H1/46 主分类号 C23C14/35
代理机构 代理人
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