| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable hall element which is inexpensive, enables mass production, does not include any element unstable in price and supply, such as a rare metal, has high mobility, and has low temperature dependence in mobility, a carrier density, and an output voltage.SOLUTION: A hall element 1 is formed, for example, via an isolation layer 12 of SiOetc. above a silicon substrate 11, on the isolation layer 12. The hall element 1 includes a channel region 13 composed of a graphite thin film, and four electrodes 14a, 14b, 14c, 14d. |
