发明名称 |
RESISTIVE MEMORY APPARATUS AND WRITING METHOD THEREOF |
摘要 |
A resistive memory apparatus and a writing method thereof are provided. In the method, logic data is received, and a corresponding resistive memory cell is selected. A logic level of the logic data is determined. When the logic data is in a first logic level, where a first reading current of the corresponding resistive memory cell is greater than a first reference current, a set pulse and a reset pulse are provided to the resistive memory cell during a writing period. When the logic data is in a second logic level, where a second reading current of the resistive memory cell is smaller than a second reference current, the reset pulse is provided to the resistive memory cell during the writing period. Polarities of the reset pulse and the set pulse are opposite. |
申请公布号 |
EP3121817(A1) |
申请公布日期 |
2017.01.25 |
申请号 |
EP20150192012 |
申请日期 |
2015.10.29 |
申请人 |
Winbond Electronics Corp. |
发明人 |
Chen, Frederick;Lin, Meng-Hung;Wang, Ping-Kun;Liao, Shao-Ching;Chou, Chuan-Sheng |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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