| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows attaining low resistance and sufficiently ensuring the strength of a substrate, and to provide a method of manufacturing the same.SOLUTION: In a semiconductor device 1 including a substrate 5 composed of n-type SiC and a drift layer 6 formed on the substrate 5 and composed of n-type SiC, back-side trenches 7 are formed in a direction from a second surface 5B to a first surface 5A of the substrate 5, and a contact layer 8 that forms an ohmic contact between the substrate 5 and the layer is formed along inner surfaces of the trenches. Further, a metal buried layer 10 is buried in an inner side of the contact layer 8 in the back-side trenches 7. |
