发明名称 | 窒化ガリウム結晶、及び窒化ガリウム結晶の製造方法 | ||
摘要 | PROBLEM TO BE SOLVED: To provide gallium nitride in which the generation of a stacking fault is controlled, and the main surface is a nonpolar surface or a semipolar surface.SOLUTION: In a gallium nitride crystal, the emission intensity ratio (BSF peak/NBE peak) of the emission (BSF peak) at 3.41 eV to the band-edge emission (NBE peak) of a gallium nitride crystal growth layer which is measured by low temperature PL measurement is 0.1 or below. | ||
申请公布号 | JP6064695(B2) | 申请公布日期 | 2017.01.25 |
申请号 | JP20130049344 | 申请日期 | 2013.03.12 |
申请人 | 三菱化学株式会社 | 发明人 | 齋藤 雄也;伊藤 純貴;寺田 秀;木村 博充 |
分类号 | C30B29/38 | 主分类号 | C30B29/38 |
代理机构 | 代理人 | ||
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