| 摘要 |
PROBLEM TO BE SOLVED: To inhibit fluctuation of electrical characteristics in a silicon carbide semiconductor device, which is caused from fluctuation in activation rate of an ion-implanted impurity.SOLUTION: A silicon carbide semiconductor device 10 comprises: a base region 3 which is formed by ion implanting an impurity into a drift layer 2 composed of a silicon carbide and has an impurity concentration distribution of a retro-grade profile. After performing a heat treatment for electrically activating the impurity ion implanted into the base region 3, a surface layer of a semiconductor layer, which is damaged by the heat treatment is removed. At this time, a thickness of the drift layer 2 to be removed is determined based on a calculation result of an activation rate of the impurity. |
