| 摘要 |
PROBLEM TO BE SOLVED: To improve high frequency characteristics by realizing lower capacitance, in other words, reduction in capacitance which is caused by an insulating film present at least either between a gate electrode and a source electrode or between a gate electrode and a drain electrode.SOLUTION: A semiconductor device includes a semiconductor region 1, a gate electrode 2 formed above the semiconductor region, a source electrode 3 and a drain electrode 4 which are formed above the semiconductor region, on each side across the gate electrode, a first insulating film 5 covering a surface of the semiconductor region, a second insulating film 6 which has a dielectricity lower than the first insulating film, and is provided above the first insulating film present at least either between the source electrode and the gate electrode or between the drain electrode and the gate electrode. |
