| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma processing apparatus and method capable of processing a desired processed region of a substrate entirely and efficiently in a short time, by generating plasma stably and efficiently, when performing high temperature heat treatment uniformly for a very short time in the vicinity of the substrate surface, or when performing low temperature plasma processing of a substrate by irradiating the substrate with plasma of reaction gas or with plasma and reaction gas flow simultaneously .SOLUTION: In an inductively-coupled plasma torch unit T, a solenoid coil 3 is disposed in the vicinity of a first quartz block 4 and a second quartz block 5, and the space 7 in a long chamber is annular. Plasma P generated in the space 7 in the long chamber is exposed to a substrate 2 at a long and linear aperture 8 in the long chamber. The substrate 2 is processed by moving the long chamber and a substrate mounting table 1 relatively, in a direction perpendicular to the longitudinal direction of the aperture 8. |
