| 发明名称 |
METHOD FOR MANUFACTURING COMPONENT-EMBEDDED SUBSTRATE, AND COMPONENT-EMBEDDED SUBSTRATE |
| 摘要 |
In a method for manufacturing a device embedded substrate (20), a conductive via (16) that penetrates a first insulating layer (5) and a second insulating layer (11) from an outer metal layer (14) to reach a second terminal (4b) of an IC device (4) is formed after forming the outer metal layer (14). |
| 申请公布号 |
EP2999319(A4) |
申请公布日期 |
2017.01.25 |
| 申请号 |
EP20130884904 |
申请日期 |
2013.05.14 |
| 申请人 |
Meiko Electronics Co., Ltd. |
发明人 |
TODA, Mitsuaki;MATSUMOTO, Tohru;MURATA, Seiko |
| 分类号 |
H01L21/60;H01L23/48;H05K3/46 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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