发明名称 Transparent electromagnetic interference shield
摘要 A transparent electromagnetic interference shield includes a first transparent substrate and an electromagnetic interference shielding layer. The electromagnetic interference shielding layer includes a transparent conductive polymer film which is formed on the first transparent substrate, and a plurality of metallic warp and weft lines which are laid on the transparent conductive polymer film. The warp lines and the weft lines cross one another.
申请公布号 US9554494(B2) 申请公布日期 2017.01.24
申请号 US201414552656 申请日期 2014.11.25
申请人 NATIONAL TSING HUA UNIVERSITY 发明人 Tai Nyan-Hwa;Kuo I-Ting
分类号 H05K9/00 主分类号 H05K9/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A transparent electromagnetic interference shield comprising: a first transparent substrate; a second transparent substrate; and an electromagnetic interference shielding layer interposed between said first and second transparent substrates and including a transparent conductive polymer film which is formed on said first transparent substrate, and a plurality of metallic warp and weft lines which are laid on said transparent conductive polymer film, said warp lines and said weft lines intersecting one another to form a grid network; wherein said transparent conductive polymer film includes a conductive polymer and surface-modified few-layer graphene dispersed in the conductive polymer, wherein said warp lines are printed on said second transparent substrate, and said weft lines are printed on said second transparent substrate and said warp lines, wherein each of said warp and weft lines has a width ranging from 50 μm to 200 μm, wherein each of said weft lines is spaced apart from an adjacent one of said weft lines by a spacing ranging from 0.5 mm to 1.0 mm apart, and each of said warp lines is spaced apart from an adjacent one of said warp lines by a spacing ranging from 0.5 mm to 1.0 mm, wherein the transparent electromagnetic interference shield has a sheet resistance not greater than 10 Ω/sq.
地址 Hsinchu TW