Doped metal-insulator-transition latch circuitry

摘要

Some embodiments of the present invention may include one, or more, of the following features, characteristics or advantages: (i) latch device including multiple Ecrit material regions all electrically connected to a common terminal (sometimes structured and shaped in the form of a storage plate conductor); (ii) bi-stable three-terminal latch device using two Ecrit property regions; (iii) three-terminal, two-Ecrit-region latch device where, for each Ecrit region, (Vdd−Vss) divided by (region thickness, dn) is greater than the region's Ecrit value; or (iv) use of multiple Ecrit material region latch devices to provide data storage instrumentality in a static memory device.

主权项

1. An integrated circuit latch device comprising:
a first conductor maintained at a first voltage level; a second conductor maintained at a second voltage level that is higher than the first voltage level; an adjustable voltage conductor electrically connected to a transistor; a first layer of doped Metal-Insulator-Transition material electrically connected between the first conductor and the adjustable voltage conductor; and a second layer of doped Metal-Insulator-Transition material electrically connected between the second conductor and the adjustable voltage conductor,
the adjustable voltage conductor being biased by an output voltage of the transistor, andthe output voltage being at either the first voltage level or the second voltage level such that, when the adjustable voltage conductor is at the first voltage level, the first layer of doped Metal-Insulator-Transition material is conductive and the second layer of doped Metal-Insulator-Transition material is insulative and such that, when the adjustable voltage conductor is at the second voltage level, the first layer of doped Metal-Insulator-Transition material is insulative and the second layer of doped Metal-Insulator-Transition material is conductive.