| 发明名称 | Method of manufacturing light emitting element | ||
| 摘要 | A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion. | ||
| 申请公布号 | US9553238(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201514947716 | 申请日期 | 2015.11.20 |
| 申请人 | NICHIA CORPORATION | 发明人 | Kashimoto Kazuki;Itasaka Masafumi;Kasai Hisashi;Azuma Naoki |
| 分类号 | H01L21/00;H01L33/38;H01L33/08 | 主分类号 | H01L21/00 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. A method of manufacturing a semiconductor light emitting element comprising: forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body comprising a first semiconductor layer and a second semiconductor layer having different conductivity types; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer such that a portion of an upper surface of the extending portion remains exposed from the conductor layer; after forming the conductor layer, forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion. | ||
| 地址 | Anan-Shi JP | ||