| 发明名称 |
Semiconductor device and related fabrication methods |
| 摘要 |
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap. |
| 申请公布号 |
US9553187(B2) |
申请公布日期 |
2017.01.24 |
| 申请号 |
US201414567357 |
申请日期 |
2014.12.11 |
| 申请人 |
NXP USA, Inc. |
发明人 |
Chen Weize;De Souza Richard J.;Hoque Mazhar Ul;Parris Patrice M. |
| 分类号 |
H01L29/78;H01L29/66;H01L27/02;H01L21/28;H01L29/49 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure comprising:
a body well region of semiconductor material having a first conductivity type; a drift region of semiconductor material having a second conductivity type; a source region of semiconductor material having the second conductivity type, a channel portion of the body well region residing laterally between the source region and a first portion of the drift region, the first portion being adjacent to the channel portion; and a gate structure overlying at least the channel portion of the body well region and the first portion of the drift region, wherein
a second portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type,a throttling portion of the gate structure overlies the first portion of the drift region and at least a portion of the channel portion,a doping of the throttling portion is different from the second portion of the gate structure, anda width of an area of the throttling portion that overlaps the channel portion is less than a width of the gate structure. |
| 地址 |
Austin TX US |
