Semiconductor device having supporter

摘要

A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

主权项

1. A semiconductor device, comprising:
a plurality of lower electrodes disposed on a substrate; an intermediate supporter, first upper supporter, and second upper supporter disposed between the lower electrodes; an upper electrode disposed on the lower electrodes; and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode, wherein: the intermediate supporter is formed at an intermediate level between upper ends and lower ends of the lower electrodes, the first and second upper supporters are spaced apart from the intermediate supporter, and are adjacent to the upper ends of the lower electrodes, the intermediate supporter and the first upper supporter include a first element, a second element, and oxygen, an oxide of the first element has better adhesion to the lower electrodes than the second upper supporter, and an oxide of the second element has a higher band gap energy than the oxide of the first element.