发明名称 Abatement system having a plasma source
摘要 Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
申请公布号 US9552967(B2) 申请公布日期 2017.01.24
申请号 US201614995187 申请日期 2016.01.13
申请人 APPLIED MATERIALS, INC. 发明人 Cox Michael S.;Wang Rongping;West Brian T.;Johnson Roger M.;Dickinson Colin John
分类号 H01L21/465;H01J37/32;B01D53/32 主分类号 H01L21/465
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. An abatement system, comprising: a plasma source, comprising: a body having a first end and a second end, wherein the first end is configured to couple to the foreline; andan electrode disposed in the body; and an exhaust cooling apparatus coupled to the plasma source.
地址 Santa Clara CA US