| 发明名称 | Process of structuring an active organic layer deposited on a substrate | ||
| 摘要 | A method of structuring an active organic layer deposited on a substrate, including depositing a sacrificial layer on the substrate by photolithography, the sacrificial layer being made of at least one resist, creating at least one pattern inside of the sacrificial layer, depositing an active organic layer on the sacrificial layer and in the pattern, depositing a protective layer made of organic polymer on the active layer and in the pattern of the resist sacrificial layer, removing the sacrificial layer by projection of a solvent on the resin forming the layer, and removing the protective layer by dissolving the polymer forming it in a solvent. | ||
| 申请公布号 | US9553266(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201414220261 | 申请日期 | 2014.03.20 |
| 申请人 | Commissariat A L'Energie Atomique Et Aux Energies Alternatives | 发明人 | Heitzmann Marie;Charlot Simon |
| 分类号 | H01L51/00 | 主分类号 | H01L51/00 |
| 代理机构 | Burr & Brown, PLLC | 代理人 | Burr & Brown, PLLC |
| 主权项 | 1. A method of structuring an active organic layer deposited on a substrate, said method comprising the steps of: depositing a sacrificial layer on the substrate by photolithography, the sacrificial layer being made of at least one resist comprising a resin; creating at least one opening inside of the sacrificial layer defining a pattern; depositing an active organic layer on the sacrificial layer and in the pattern; depositing a protective layer made of organic polymer on the active organic layer and in the pattern of the sacrificial layer; removing the sacrificial layer by projecting a solvent on the resin forming the layer; and then removing the protective layer by dissolving the polymer forming it in a solvent when the protective layer is disposed on the active organic layer, without removing the active organic layer. | ||
| 地址 | Paris FR | ||