Semiconductor light emitting device and manufacturing method thereof

摘要

A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

主权项

1. A method for manufacturing a semiconductor light emitting device, the method comprising:
forming a base layer with a first conductivity-type semiconductor on a substrate; forming a mask layer and a mold layer having a plurality of openings exposing portions of the base layer on the base layer; forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape; and sequentially forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores, wherein forming the plurality of first conductivity-type semiconductor cores comprises:
forming, a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion;removing the mold layer;forming an additional growth region on the first region such that the body portion has a hexagonal prism shape, wherein forming the additional growth region comprises growing a plurality of first conductivity-type semiconductor cores under a hydrogen (H2) atmosphere; andgrowing the plurality of first conductivity-type semiconductor cores under a nitrogen (N2) atmosphere, before and after growing the plurality of first conductivity-type semiconductor cores under the hydrogen (H2) atmosphere.