发明名称 |
Semiconductor memory device and method of manufacturing the same |
摘要 |
The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are stacked with a trench interposed therebetween. A seed pattern is formed on a surface of the trench and a metal layer is formed on the seed pattern in the trench. |
申请公布号 |
US9553168(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201414536276 |
申请日期 |
2014.11.07 |
申请人 |
SK Hynix Inc. |
发明人 |
Kwak Sang Hyon |
分类号 |
H01L29/66;H01L27/115;H01L21/285;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A method of manufacturing a semiconductor memory device, the method comprising:
alternately stacking interlayer insulation layers and sacrificial layers over a semiconductor substrate; forming channel holes vertically passing through the interlayer insulation layers and the sacrificial layers; forming memory layers along surfaces of the channel holes; forming channel layers in the channel holes including the memory layers; forming a trench between the channel holes by etching a portion of the interlayer insulation layers and the sacrificial layers after forming the channel layers; forming recesses between the interlayer insulation layers by removing the sacrificial layers after forming the trench; forming seed films over surfaces of the recesses and on surfaces of the interlayer insulation layers; forming sacrificial patterns in the recesses after forming the seed films; forming seed patterns in the recesses by etching the seed films exposed between the sacrificial patterns using the sacrificial patterns as an etching barrier; and growing metal layers from the seed patterns in the recesses. |
地址 |
Gyeonggi-do KR |