发明名称 Backside redistribution layer (RDL) structure
摘要 An embodiment package on package (PoP) device includes a molding compound having a metal via embedded therein, a passivation layer disposed over the molding compound, the passivation layer including a passivation layer recess vertically aligned with the metal via, and a redistribution layer bond pad capping the metal via, a portion of the redistribution layer bond pad within the passivation layer recess projecting above a top surface of the molding compound.
申请公布号 US9553059(B2) 申请公布日期 2017.01.24
申请号 US201314137231 申请日期 2013.12.20
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Po-Hao;Lin Jing-Cheng
分类号 H01L23/00;H01L23/498;H01L21/768;H01L25/10;H01L25/00;H01L23/538 主分类号 H01L23/00
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method comprising: forming and patterning a passivation layer over a carrier substrate; forming a plurality of bond pads over the patterned passivation layer; forming a plurality of through vias on the plurality of bond pads, the plurality of through vias extending in a direction perpendicular to a major surface of the carrier substrate; attaching a first die to the patterned passivation layer; encapsulating the plurality of through vias and the first die with a molding compound; removing the carrier substrate; and patterning the patterned passivation layer to form a plurality of recesses in the patterned passivation layer, the plurality of bond pads being exposed in the recesses of the patterned passivation layer, each of the plurality of bond pads having sidewalls that taper in a direction away from the molding compound, bottommost surfaces of the plurality of bond pads being level with a bottommost surface of the patterned passivation layer, the bottommost surfaces of the plurality of bond pads and the bottommost surface of the patterned passivation layer facing away from the molding compound.
地址 Hsin-Chu TW