发明名称 Copper interconnects having a titanium-platinum-titanium assembly between copper and compound semiconductor
摘要 Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first barrier layer disposed over the first Ti layer, a second Ti layer disposed over the first barrier layer, and a copper (Cu) layer disposed over the second Ti layer. The second Ti layer can be configured to inhibit or reduce alloying of the Cu layer and the first barrier layer. The first Ti layer, the first barrier layer, and the second Ti layer can be configured to yield a barrier between the Cu layer and an ohmic metal layer formed on the compound semiconductor. The metalized structure can further include a third Ti layer disposed over the Cu layer and a second barrier layer disposed over the third Ti layer. The first and second barrier layers can include platinum (Pt) and/or palladium (Pd).
申请公布号 US9553049(B2) 申请公布日期 2017.01.24
申请号 US201313774228 申请日期 2013.02.22
申请人 Skyworks Solutions, Inc. 发明人 Cheng Kezia
分类号 H01L23/532;H01L21/768;H01L23/00;H01L21/469;H01L23/485;H01L29/47;H01L29/45;H01L29/41 主分类号 H01L23/532
代理机构 Knobbe Martens Olson and Bear LLP 代理人 Knobbe Martens Olson and Bear LLP
主权项 1. A method for forming a metalized structure for a compound semiconductor device, the method comprising: forming an ohmic metal layer directly over a gallium arsenide (GaAs) semiconductor substrate; forming a first titanium (Ti) only layer over the GaAs semiconductor substrate associated with the compound semiconductor device; forming a first platinum (Pt) barrier layer directly over the first Ti only layer; forming a second Ti only layer directly over and in contact with substantially an entire top surface of the first Pt barrier layer; forming a copper (Cu) layer directly over the second Ti only layer through evaporation deposition, the Cu layer having a generally trapezoidal shape; forming a third Ti only layer directly over the Cu layer and covering a top and side surface of the Cu layer; and forming a second Pt barrier layer directly over the third Ti only layer and covering a top and side surface of the third Ti only layer.
地址 Woburn MA US