| 发明名称 | Film forming method and film forming apparatus | ||
| 摘要 | A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product. | ||
| 申请公布号 | US9551068(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201514694200 | 申请日期 | 2015.04.23 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Kumagai Takeshi;Otani Muneyuki;Okubo Kazuya |
| 分类号 | C23C16/455;H01J37/32;H01L21/311;C23C16/40;C23C16/50;C23C16/458 | 主分类号 | C23C16/455 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A film forming method, comprising: supplying a first source gas containing a first metal element onto a substrate; supplying a second source gas containing a second metal element onto the substrate; supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element, wherein a mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product, and wherein the substrate is loaded on a rotary table, the supplying a first source gas and the supplying a second source gas are simultaneously performed in a first process region, and the supplying a reaction gas is performed in a second process region to which the substrate can move from the first process region by rotation of the rotary table. | ||
| 地址 | Tokyo JP | ||