Solid-state imaging device having reduced κTC noises and method of driving the same

摘要

A solid-state imaging device includes: pixels arrayed two-dimensionally; pixel common circuits arrayed in a matrix, each shared by adjacent pixels of a certain number among the pixels; column common circuits, each provided for one of columns of the pixel common circuits, and shared by pixel common circuits belonging to a same column; column signal lines each provided for one of the columns of the pixel common circuits; and reset signal lines each provided for one of the columns of the pixel common circuits, in which an electric signal from each of the pixels is detected by a corresponding one of the pixel common circuits and read by a corresponding one of the column common circuits, and the electric signal detected by the corresponding one of the pixel common circuits is reset by a feedback path including one column signal line, one column common circuit, and one reset signal lines.

主权项

1. A solid-state imaging device comprising:
a plurality of pixels arrayed two-dimensionally; a plurality of pixel common circuits arrayed in a matrix, each of which is shared by adjacent pixels of a certain number among the pixels; a plurality of column common circuits, each of which is provided for one of columns of the pixel common circuits, and shared by pixel common circuits belonging to a same column; column signal lines each provided for one of the columns of the pixel common circuits; and reset signal lines each provided for one of the columns of the pixel common circuits, wherein an electric signal from each of the pixels is detected by a corresponding one of the pixel common circuits and read by a corresponding one of the column common circuits, the electric signal detected by the corresponding one of the pixel common circuits is reset by a feedback path including one of the column signal lines, one of the column common circuits, and one of the reset signal lines, the pixels each include: a photoelectric conversion unit for converting incident light into an electric signal; storage capacitance for storing the electric signal from the photoelectric conversion unit; and a connection transistor for connecting a corresponding pixel common circuit and the storage capacitance, the pixel common circuits each include: detection capacitance for detecting the electric signal in the storage capacitance from a corresponding pixel via the connection transistor; an amplifier transistor for amplifying the electric signal in the detection capacitance, and outputting the amplified electric signal to a corresponding one of the column signal lines; and a reset transistor for connecting the detection capacitance and a corresponding one of the reset signal lines, the column common circuits each include an amplifier circuit connected to a corresponding one of the column signal lines, the amplifier circuit having an output terminal connected to a corresponding one of the reset signal lines, and a total of capacitance values of the storage capacitance and the detection capacitance is set to be greater than or equal to ten times a coupling capacitance value of storage capacitance values within the pixels adjacent to each other.