发明名称 Vertical pressure sensitive structure
摘要 Embodiments related to pressure sensitive structures are described and depicted.
申请公布号 US9550669(B2) 申请公布日期 2017.01.24
申请号 US201213368370 申请日期 2012.02.08
申请人 Infineon Technologies AG 发明人 Kautzsch Thoralf
分类号 G01L9/00;G01L9/16;H01S4/00;H01L21/336;H01L21/311;B81C1/00;H04R19/00;H04R31/00 主分类号 G01L9/00
代理机构 Schiff Hardin LLP 代理人 Schiff Hardin LLP
主权项 1. A method of manufacturing a pressure sensitive structure comprising: generating a plurality of trenches in a substrate, wherein adjacent trenches are separated from each other by a respective side-wall, wherein generating the plurality of trenches comprises: etching trench openings;forming a coating layer on a surface of each respective trench opening, wherein the coating layer comprises material different from a material of the substrate; andsealing the respective trench opening; and after generating the plurality of trenches, removing material to generate a cavity extending from a main surface of the substrate to at least one side-wall, wherein removing material comprises: applying a first selective etching with a higher etching rate for the material of the substrate compared to the material of the coating layer to allow a stopping of the first selective etching on the coating layer of said at least one side-wall; andapplying a second etching, the second etching removing at least partially the coating layer of at least one of the plurality of trenches.
地址 Neubiberg DE