| 发明名称 | Light emitting device | ||
| 摘要 | A light emitting device includes a first conductive semiconductor layer on a substrate, a control layer interposed between the substrate and the first conductive semiconductor layer. The control layer includes a first nitride semiconductor layer having aluminum (Al), a plurality of nano-structures on the first nitride semiconductor layer, and a second nitride semiconductor layer provided on the first nitride semiconductor layer and having gallium (Ga). | ||
| 申请公布号 | US9553236(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201414273927 | 申请日期 | 2014.05.09 |
| 申请人 | LG INNOTEK CO., LTD. | 发明人 | Choi Jae Hoon;Choi Young Jae |
| 分类号 | H01L33/12;H01L33/32;H01L21/02;H01L33/02;H01L33/00 | 主分类号 | H01L33/12 |
| 代理机构 | Ked & Associates LLP | 代理人 | Ked & Associates LLP |
| 主权项 | 1. A light emitting device comprising: a substrate; a first conductive semiconductor layer disposed on the substrate; and a control layer disposed between the substrate and the first conductive semiconductor layer, wherein the control layer includes a first nitride semiconductor layer having aluminum (Al), a plurality of nano-particles disposed in a recess of the first nitride semiconductor layer, and a second nitride semiconductor layer provided on the first nitride semiconductor layer and having gallium (Ga), and wherein air is filled between the nano-particles disposed in the recess. | ||
| 地址 | Seoul KR | ||