Backside illuminated image sensor

摘要

A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.

主权项

1. A method for manufacturing a backside illuminated image sensor, the method comprising:
forming an align key through a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate includes a first semiconductor layer, a second semiconductor layer, and a buried insulation layer disposed between the first and second semiconductor layers, and wherein the align key passes through the second semiconductor layer, the buried insulation layer, and at least partially through the first semiconductor layer; forming a light-receiving element in the second semiconductor layer; forming a patterned conductive layer proximate a backside of the second semiconductor layer, wherein the patterned conductive layer is electrically coupled to the align key; and removing the buried insulation layer and the first semiconductor layer to a predetermined thickness that exposes at least a portion of the align key, wherein the buried insulation layer is removed using one or more processes that selectively remove the buried insulation layer while leaving exposed portions of the align key generally intact.