Fabrication of III-V-on-insulator platforms for semiconductor devices

摘要

Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to one embodiment, compositionally-graded buffer layers of III-V alloy are grown on a silicon substrate, and a smart cut technique is used to cut and transfer one or more layers of III-V alloy to a silicon wafer having an insulator layer such as an oxide. One or more transferred layers of III-V alloy can be etched away to expose a desired transferred layer of III-V alloy, upon which a semi-insulating buffer layer and channel layer can be grown to yield IIIVOI platform on which semiconductor devices (e.g., planar and/or 3-dimensional FETs) can be fabricated.

主权项

1. A method for fabricating a III-V-on-insulator (IIIVOI) platform for a semiconductor device, comprising:
growing a plurality of compositionally-graded III-V buffer layers on a first substrate; implanting ions into one or more of the plurality of compositionally-graded III-V buffer layers to create a cleave plane; bonding a second substrate to one or more of the plurality of compositionally-graded III-V buffer layers; separating, along the cleave plane, the second substrate and the one or more compositionally-graded III-V buffer layers bonded to the second substrate from the first substrate and one or more compositionally-graded III-V buffer layers bonded to the first substrate; growing a semi-insulating buffer layer on one of the one or more compositionally-graded III-V buffer layers bonded to the second substrate; and growing a channel layer on the semi-insulating buffer layer.