Method of manufacturing semiconductor device and structure with trenches in passivation film

摘要

A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a first element region, a second element region adjacent to the first element region in a first direction, a third element region adjacent to the first region in a second direction, and a first scribe region extending to the first direction between the first element region and the third element region, forming a first trench in the passivation film between the first scribe region and the first element region, forming a second trench in the passivation film between the third element region and the first scribe region, and forming a film on the passivation film where the trenches have been formed by coating. The each of trenches is formed continuously along the first and the second element region.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a passivation film on a substrate including a plurality of element regions and a scribe region, the plurality of element regions including a first element region, a second element region adjacent to the first element region in a first direction, a third element region adjacent to the first element region in a second direction different from the first direction, and a fourth element region adjacent to the second element region in the second direction, and the scribe region including a first scribe region extending in the first direction between a first row of element regions including the first element region and the second element region and a second row of element regions including the third element region and the fourth element region, a first portion extending in the second direction between the first element region and the second element region, and a second portion extending in the second direction between the third element region and the fourth element region; forming a first trench in the passivation film between the first scribe region and the first row of the element regions, the first trench extending in the first direction; forming a second trench in the passivation film between the second row of element regions and the first scribe region, the second trench extending in the first direction; and forming a film on the passivation film where the first trench and the second trench have been formed by coating, wherein the first trench extends continuously along the first element region, the second element region, and the first portion, and wherein the second trench extends continuously along the third element region, the fourth element region, and the second portion.